TCAD And Physical Modeling For Failure And Aging Mechanism Investigations On Gan-On-Si Transistor For Power Electronic Applications
Description: TCAD and physical modeling for failure and aging mechanism investigations on GaN-on-Si transistor for power electronic...
Location: Toulouse , Occitania
Language(s): Only English Required
Date Added: 24 May 2024
Language(s): Only English Required
Date Added: 24 May 2024